Byung-Gook Park

Byung-Gook Park

Seoul National University

Professor

Department of Electrical and Computer Engineering

Research Area

  • #Materials science
  • #Optoelectronics
  • #Transistor
  • #Voltage
  • #Logic gate
  • #Electronic engineering
  • #Resistive random-access memory
  • #Threshold voltage
  • #Physics
  • #Electrical engineering

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Related papers to
‘ Materials science ‘ : 87

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    2017/11

    8.1 Impact Factor

    95 citations

    Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, Byung-Gook Park

    DOI : 10.1021/ACSAMI.7B11191

    • #Materials science
    • #Optoelectronics
    • #Nanotechnology
    • #Pulse (signal processing)
    • #Tin
    • #Conductance
    • #Memristor
    • #Silicon nitride
    • #Equivalent series resistance
    • #Overshoot (signal)
    • #Spike-timing-dependent plasticity

All papers authored by
‘ Byung-Gook Park ’ : 137

  • Demonstration of L-Shaped Tunnel Field-Effect Transistors

    2016/04
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    141 citations

    Sang Wan Kim, Jang Hyun Kim, Tsu-Jae King Liu, Woo Young Choi, Byung-Gook Park

    DOI : 10.1109/TED.2015.2472496

    • #Physics
    • #Electrical engineering
    • #Condensed matter physics
    • #Doping
    • #Planar
    • #Quantum tunnelling
    • #Logic gate
    • #Transistor
    • #Perpendicular
    • #Tunnel junction
    • #Field-effect transistor

Related papers to
‘ Materials science ‘ : 87

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    2017/11
    ACS APPLIED MATERIALS & INTERFACES

    8.1 Impact Factor

    95 citations

    Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, Byung-Gook Park

    DOI : 10.1021/ACSAMI.7B11191

    • #Materials science
    • #Optoelectronics
    • #Nanotechnology
    • #Pulse (signal processing)
    • #Tin
    • #Conductance
    • #Memristor
    • #Silicon nitride
    • #Equivalent series resistance
    • #Overshoot (signal)
    • #Spike-timing-dependent plasticity
  • Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

    2015/05
    APPLIED PHYSICS LETTERS

    3.1 Impact Factor

    83 citations

    Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park

    DOI : 10.1063/1.4921926

    • #Materials science
    • #Optoelectronics
    • #Nonlinear system
    • #Dielectric
    • #Random access memory
    • #Fabrication
    • #Low-power electronics
    • #Resistive random-access memory
    • #Resistive switching
    • #Tunnel barrier

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Contact information

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All papers authored by
‘ Byung-Gook Park ’ : 137

  • Demonstration of L-Shaped Tunnel Field-Effect Transistors

    2016/04
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    141 citations

    Sang Wan Kim, Jang Hyun Kim, Tsu-Jae King Liu, Woo Young Choi, Byung-Gook Park

    DOI : 10.1109/TED.2015.2472496

    • #Physics
    • #Electrical engineering
    • #Condensed matter physics
    • #Doping
    • #Planar
    • #Quantum tunnelling
    • #Logic gate
    • #Transistor
    • #Perpendicular
    • #Tunnel junction
    • #Field-effect transistor
  • Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory

    2016/05
    IEEE ELECTRON DEVICE LETTERS

    3.0 Impact Factor

    116 citations

    Sang-Ho Lee, Wandong Kim, Dae Woong Kwon, Joo Yun Seo, Myung Hyun Baek, Sungbok Lee, Jinkyu Kang, Woojae Jang, Jong Ho Lee, Byung-Gook Park

    DOI : 10.1109/LED.2016.2568171

    • #Computer science
    • #Electronic engineering
    • #Topology
    • #Logic gate
    • #Very-large-scale integration
    • #Permutation
    • #Transistor
    • #Equivalent circuit
    • #Search engine
    • #Imagination
    • #Threshold voltage

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