Kwang-Seok Seo

Kwang-Seok Seo

Seoul National University

Professor

Department of Electrical and Computer Engineering

Research Area

  • #Materials science
  • #Optoelectronics
  • #Transistor
  • #Breakdown voltage
  • #Threshold voltage
  • #High-electron-mobility transistor
  • #Leakage (electronics)
  • #Algan gan
  • #Heterojunction
  • #Gate oxide

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Related papers to
‘ Materials science ‘ : 27

  • High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- ${\rm SiN}_{x}$ /RF-Sputtered- ${\rm HfO}_{2}$

    2014/02

    2.8 Impact Factor

    94 citations

    Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, Kwang-Seok Seo

    DOI : 10.1109/LED.2013.2293579

    • #Materials science
    • #Optoelectronics
    • #Leakage (electronics)
    • #Insulator (electricity)
    • #High voltage
    • #Breakdown voltage
    • #Atomic layer deposition
    • #Gate oxide
    • #Threshold voltage
    • #Subthreshold slope

All papers authored by
‘ Kwang-Seok Seo ’ : 28

  • High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- ${\rm SiN}_{x}$ /RF-Sputtered- ${\rm HfO}_{2}$

    2014/02
    IEEE ELECTRON DEVICE LETTERS

    2.8 Impact Factor

    94 citations

    Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, Kwang-Seok Seo

    DOI : 10.1109/LED.2013.2293579

    • #Materials science
    • #Optoelectronics
    • #Leakage (electronics)
    • #Insulator (electricity)
    • #High voltage
    • #Breakdown voltage
    • #Atomic layer deposition
    • #Gate oxide
    • #Threshold voltage
    • #Subthreshold slope

Related papers to
‘ Materials science ‘ : 27

  • High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- ${\rm SiN}_{x}$ /RF-Sputtered- ${\rm HfO}_{2}$

    2014/02
    IEEE ELECTRON DEVICE LETTERS

    2.8 Impact Factor

    94 citations

    Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, Kwang-Seok Seo

    DOI : 10.1109/LED.2013.2293579

    • #Materials science
    • #Optoelectronics
    • #Leakage (electronics)
    • #Insulator (electricity)
    • #High voltage
    • #Breakdown voltage
    • #Atomic layer deposition
    • #Gate oxide
    • #Threshold voltage
    • #Subthreshold slope
  • Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

    2014/01
    IEEE ELECTRON DEVICE LETTERS

    2.8 Impact Factor

    50 citations

    Woojin Choi, Hojin Ryu, Namcheol Jeon, Minseong Lee, Ho-Young Cha, Kwang-Seok Seo

    DOI : 10.1109/LED.2013.2291551

    • #Materials science
    • #Optoelectronics
    • #Electrical engineering
    • #Semiconductor
    • #Silicon
    • #Insulator (electricity)
    • #Hysteresis
    • #Transistor
    • #Atomic layer deposition
    • #Gallium nitride
    • #Threshold voltage

Get access to
Contact information

Log in

All papers authored by
‘ Kwang-Seok Seo ’ : 28

  • High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- ${\rm SiN}_{x}$ /RF-Sputtered- ${\rm HfO}_{2}$

    2014/02
    IEEE ELECTRON DEVICE LETTERS

    2.8 Impact Factor

    94 citations

    Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, Kwang-Seok Seo

    DOI : 10.1109/LED.2013.2293579

    • #Materials science
    • #Optoelectronics
    • #Leakage (electronics)
    • #Insulator (electricity)
    • #High voltage
    • #Breakdown voltage
    • #Atomic layer deposition
    • #Gate oxide
    • #Threshold voltage
    • #Subthreshold slope
  • Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

    2014/01
    IEEE ELECTRON DEVICE LETTERS

    2.8 Impact Factor

    50 citations

    Woojin Choi, Hojin Ryu, Namcheol Jeon, Minseong Lee, Ho-Young Cha, Kwang-Seok Seo

    DOI : 10.1109/LED.2013.2291551

    • #Materials science
    • #Optoelectronics
    • #Electrical engineering
    • #Semiconductor
    • #Silicon
    • #Insulator (electricity)
    • #Hysteresis
    • #Transistor
    • #Atomic layer deposition
    • #Gallium nitride
    • #Threshold voltage

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