Hyungcheol Shin

Hyungcheol Shin

Seoul National University

Professor

Department of Electrical and Computer Engineering

Research Area

  • #Materials science
  • #Optoelectronics
  • #Nanowire
  • #Transistor
  • #Electrical engineering
  • #Field-effect transistor
  • #NAND gate
  • #Physics
  • #Electronic engineering
  • #Communication channel

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Related papers to
‘ Materials science ‘ : 50

  • Analysis of Electrothermal Characteristics of GAA Vertical Nanoplate-Shaped FETs

    2018/07

    2.7 Impact Factor

    8 citations

    Dokyun Son, Ilho Myeong, H. S. Kim, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin

    DOI : 10.1109/TED.2018.2832239

    • #Materials science
    • #Condensed matter physics
    • #Electrode
    • #Thermal
    • #Scaling
    • #Logic gate
    • #Gallium arsenide
    • #Transistor
    • #Thermal resistance

All papers authored by
‘ Hyungcheol Shin ’ : 68

  • Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory

    2016/01
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    17 citations

    Kyunghwan Lee, Myounggon Kang, Yuchul Hwang, Hyungcheol Shin

    DOI : 10.1109/TED.2015.2509004

    • #Physics
    • #Electronic engineering
    • #Computational physics
    • #Quantum tunnelling
    • #Charge loss
    • #Activation energy
    • #Nand flash memory
    • #Arrhenius equation

Related papers to
‘ Materials science ‘ : 50

  • Analysis of Electrothermal Characteristics of GAA Vertical Nanoplate-Shaped FETs

    2018/07
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.7 Impact Factor

    8 citations

    Dokyun Son, Ilho Myeong, H. S. Kim, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin

    DOI : 10.1109/TED.2018.2832239

    • #Materials science
    • #Condensed matter physics
    • #Electrode
    • #Thermal
    • #Scaling
    • #Logic gate
    • #Gallium arsenide
    • #Transistor
    • #Thermal resistance
  • Step-by-step implementation of an amplifier circuit with a graphene field-effect transistor on a printed-circuit board

    2014/08
    CURRENT APPLIED PHYSICS

    2.2 Impact Factor

    7 citations

    Jaehong Lee, Jaeho Lee, David H. Seo, Hyungcheol Shin, Seongjun Park, Hyun-Jong Chung

    DOI : 10.1016/J.CAP.2014.05.015

    • #Materials science
    • #Optoelectronics
    • #Electronic circuit
    • #Amplifier
    • #Electronic component
    • #Transistor
    • #Capacitor
    • #Printed circuit board
    • #Inductor
    • #RF power amplifier

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Contact information

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All papers authored by
‘ Hyungcheol Shin ’ : 68

  • Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory

    2016/01
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    17 citations

    Kyunghwan Lee, Myounggon Kang, Yuchul Hwang, Hyungcheol Shin

    DOI : 10.1109/TED.2015.2509004

    • #Physics
    • #Electronic engineering
    • #Computational physics
    • #Quantum tunnelling
    • #Charge loss
    • #Activation energy
    • #Nand flash memory
    • #Arrhenius equation
  • Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

    2014/01
    IEEE ELECTRON DEVICE LETTERS

    2.8 Impact Factor

    12 citations

    Kyunghwan Lee, Myounggon Kang, Seongjun Seo, Duckseoung Kang, Dong Hua Li, Yuchul Hwang, Hyungcheol Shin

    DOI : 10.1109/LED.2013.2288267

    • #Chemistry
    • #Optoelectronics
    • #Electrical engineering
    • #Oxide
    • #Electron
    • #Electric field
    • #Quantum tunnelling
    • #Temperature measurement
    • #Failure mechanism
    • #Nand flash memory
    • #Trap density

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