ILGU YUN

ILGU YUN

Yonsei University

Professor

School of Electrical and Electronic Engineering

Research Area

  • #Electronic engineering
  • #Engineering
  • #Optoelectronics
  • #Chemistry
  • #Thin-film transistor
  • #Transistor
  • #Threshold voltage
  • #Physics
  • #Analytical chemistry
  • #Materials science

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Related papers to
‘ Electronic engineering ‘ : 19

  • Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

    2017/04

    2.6 Impact Factor

    14 citations

    Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

    DOI : 10.1109/TED.2017.2664825

    • #Physics
    • #Electronic engineering
    • #Doping
    • #Impurity
    • #Computer simulation
    • #Electric potential
    • #Subthreshold conduction
    • #Dopant
    • #Fourier series
    • #Random dopant fluctuation

All papers authored by
‘ ILGU YUN ’ : 32

  • Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

    2017/04
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    14 citations

    Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

    DOI : 10.1109/TED.2017.2664825

    • #Physics
    • #Electronic engineering
    • #Doping
    • #Impurity
    • #Computer simulation
    • #Electric potential
    • #Subthreshold conduction
    • #Dopant
    • #Fourier series
    • #Random dopant fluctuation

Related papers to
‘ Electronic engineering ‘ : 19

  • Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

    2017/04
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    14 citations

    Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

    DOI : 10.1109/TED.2017.2664825

    • #Physics
    • #Electronic engineering
    • #Doping
    • #Impurity
    • #Computer simulation
    • #Electric potential
    • #Subthreshold conduction
    • #Dopant
    • #Fourier series
    • #Random dopant fluctuation
  • Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical Stress

    2017/01
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    8 citations

    Sang Myung Lee, Dongseok Shin, Ilgu Yun

    DOI : 10.1109/TED.2016.2631597

    • #Physics
    • #Electronic engineering
    • #Amorphous solid
    • #Bending
    • #Instability
    • #Degradation (geology)
    • #Stress (mechanics)
    • #Radius
    • #Thin-film transistor
    • #Bend radius

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Contact information

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All papers authored by
‘ ILGU YUN ’ : 32

  • Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

    2017/04
    IEEE TRANSACTIONS ON ELECTRON DEVICES

    2.6 Impact Factor

    14 citations

    Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

    DOI : 10.1109/TED.2017.2664825

    • #Physics
    • #Electronic engineering
    • #Doping
    • #Impurity
    • #Computer simulation
    • #Electric potential
    • #Subthreshold conduction
    • #Dopant
    • #Fourier series
    • #Random dopant fluctuation
  • Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

    2015/09
    APPLIED SURFACE SCIENCE

    3.2 Impact Factor

    9 citations

    Young Bok Lee, Il Kwon Oh, Edward Namkyu Cho, Pyung Moon, Hyungjun Kim, Ilgu Yun

    DOI : 10.1016/J.APSUSC.2015.05.066

    • #Materials science
    • #Analytical chemistry
    • #Thin film
    • #Dielectric
    • #Band gap
    • #X-ray photoelectron spectroscopy
    • #Crystallinity
    • #High-resolution transmission electron microscopy
    • #Atomic layer deposition
    • #High-κ dielectric

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