Dimitri Antoniadis Massachusetts Institute of Technology
Professor
Department of Electrical Engineering and Computer Science
Research Area #Optoelectronics #Materials science #Transistor #Electrical engineering #Logic gate #Physics #Electronic engineering #MOSFET #Capacitance #Engineering
SCIE paper information Papers relevant to ‘Optoelectronics’: 20
Research performance of SCIE papers matching with ‘Optoelectronics’
The graph represents professors who have published more than one paper with the keyword searched for. It allows you to compare professors' influence based on the number of published papers and citations. The graph includes only professors affiliated with 30 graduate schools in the United States. Citations of SCIE papers SCIE papers 0 6k 12k 18k 24k 30k 0 50 100 150 200 250 300 350 400 *Papers published between 2014 and 2020 were selected, and the citation number was determined by bing.com.
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
2016/11 NANO LETTERS 12.712 Impact Factor 264 citations
Amirhasan Nourbakhsh, Ahmad Zubair, Redwan N. Sajjad, K G Amir Tavakkoli, Wei Chen, Shiang Fang, Xi Ling, Jing Kong, Mildred S. Dresselhaus, Efthimios Kaxiras, Karl K. Berggren, Dimitri Antoniadis, Tomás Palacios
DOI : 10.1021/ACS.NANOLETT.6B03999
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.
2016/09 NANO LETTERS 12.712 Impact Factor 100 citations
Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan Lin, Yuhao Zhang, Meng-Hsi Chuang, Yi Hsien Lee, Dimitri Antoniadis, Jing Kong, Anantha P. Chandrakasan, Tomás Palacios
DOI : 10.1021/ACS.NANOLETT.6B02739
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Papers for author ‘Dimitri Antoniadis’: 37
Number of published SCIE papers by year
0 3 6 9 12 2014 2015 2016 2017 2018 2019 H-index What is the H-index? The H-index is defined to be h that the given journal has published h papers that have been cited h times. If the H-index with the higher rank number such that the number of citations for that publications is greater than or equal to the rank. 19 Number of NCS papers What are the NCS Journals? Nature, Cell, Science, and their sister publications. 0 *Papers published between 2014 and 2020 were selected, and the citation number was determined by bing.com.
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
2016/11 NANO LETTERS 12.712 Impact Factor 264 citations
Amirhasan Nourbakhsh, Ahmad Zubair, Redwan N. Sajjad, K G Amir Tavakkoli, Wei Chen, Shiang Fang, Xi Ling, Jing Kong, Mildred S. Dresselhaus, Efthimios Kaxiras, Karl K. Berggren, Dimitri Antoniadis, Tomás Palacios
DOI : 10.1021/ACS.NANOLETT.6B03999
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.
2016/09 NANO LETTERS 12.712 Impact Factor 100 citations
Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan Lin, Yuhao Zhang, Meng-Hsi Chuang, Yi Hsien Lee, Dimitri Antoniadis, Jing Kong, Anantha P. Chandrakasan, Tomás Palacios
DOI : 10.1021/ACS.NANOLETT.6B02739
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