Kookrin Char

Kookrin Char

Seoul National University

Professor

Department of Physics and Astronomy

Research Area

  • #Materials science
  • #Optoelectronics
  • #Doping
  • #Thin film
  • #Band gap
  • #Electron mobility
  • #Epitaxy
  • #Gate oxide
  • #Field-effect transistor
  • #Analytical chemistry

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Related papers to
‘ Materials science ‘ : 24

  • High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide

    2014/11

    3.3 Impact Factor

    93 citations

    Chulkwon Park, Useong Kim, Chan Jong Ju, Jisung Park, Young Mo Kim, Kookrin Char

    DOI : 10.1063/1.4901963

    • #Materials science
    • #Optoelectronics
    • #Semiconductor
    • #AND gate
    • #Field effect
    • #Perovskite (structure)
    • #Atomic layer deposition
    • #Field-effect transistor
    • #Gate oxide
    • #MOSFET

All papers authored by
‘ Kookrin Char ’ : 26

  • High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide

    2014/11
    APPLIED PHYSICS LETTERS

    3.3 Impact Factor

    93 citations

    Chulkwon Park, Useong Kim, Chan Jong Ju, Jisung Park, Young Mo Kim, Kookrin Char

    DOI : 10.1063/1.4901963

    • #Materials science
    • #Optoelectronics
    • #Semiconductor
    • #AND gate
    • #Field effect
    • #Perovskite (structure)
    • #Atomic layer deposition
    • #Field-effect transistor
    • #Gate oxide
    • #MOSFET

Related papers to
‘ Materials science ‘ : 24

  • High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide

    2014/11
    APPLIED PHYSICS LETTERS

    3.3 Impact Factor

    93 citations

    Chulkwon Park, Useong Kim, Chan Jong Ju, Jisung Park, Young Mo Kim, Kookrin Char

    DOI : 10.1063/1.4901963

    • #Materials science
    • #Optoelectronics
    • #Semiconductor
    • #AND gate
    • #Field effect
    • #Perovskite (structure)
    • #Atomic layer deposition
    • #Field-effect transistor
    • #Gate oxide
    • #MOSFET
  • All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

    2015/02
    APL MATERIALS

    4.3 Impact Factor

    92 citations

    Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char

    DOI : 10.1063/1.4913587

    • #Materials science
    • #Optoelectronics
    • #Dielectric
    • #Field effect
    • #Electron mobility
    • #High-κ dielectric
    • #Dielectric strength
    • #Field-effect transistor
    • #Gate oxide
    • #Gate dielectric

Get access to
Contact information

Log in

All papers authored by
‘ Kookrin Char ’ : 26

  • High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide

    2014/11
    APPLIED PHYSICS LETTERS

    3.3 Impact Factor

    93 citations

    Chulkwon Park, Useong Kim, Chan Jong Ju, Jisung Park, Young Mo Kim, Kookrin Char

    DOI : 10.1063/1.4901963

    • #Materials science
    • #Optoelectronics
    • #Semiconductor
    • #AND gate
    • #Field effect
    • #Perovskite (structure)
    • #Atomic layer deposition
    • #Field-effect transistor
    • #Gate oxide
    • #MOSFET
  • All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

    2015/02
    APL MATERIALS

    4.3 Impact Factor

    92 citations

    Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char

    DOI : 10.1063/1.4913587

    • #Materials science
    • #Optoelectronics
    • #Dielectric
    • #Field effect
    • #Electron mobility
    • #High-κ dielectric
    • #Dielectric strength
    • #Field-effect transistor
    • #Gate oxide
    • #Gate dielectric

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